Silicon integrated electro-optical modulators are essential for inserting information into optical channels in high-speed optical communication technology. Most of today’s modulators have many disadvantages, especially in integrated circuits due to its large length and the necessity for velocity matching between the electrical driven waves to optical carrier waves. The presented technology is a new structure of the modulator which allows for significantly higher modulation band widths, continuous modulation without distortions due to “memory effect” of the resonator and wide linear wide band width modulation, which opens the perspective of fast and effective analog modulation.